Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

Authors

Wen Xu, Chinese Academy of Sciences
P A. Folkes, US Army Research Laboratory
G Gumbs, City University of New York
Z Zeng, Chinese Academy of Sciences
Chao Zhang, University of WollongongFollow

RIS ID

22642

Publication Details

Xu, W., Folkes, P. A., Gumbs, G., Zeng, Z. Zhang, C. (2008). Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems. Physica E: Low-Dimensional Systems and Nanostructures, 40 1536-1538.

Abstract

We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gapquantum well systems. The theoretical model is developed through solving self-consistently the Schrodinger equation for theeigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as chargedistribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of thequantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistentcalculation can be used to understand important experimental findings and are in line with those measured experimentally.