Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems
We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gapquantum well systems. The theoretical model is developed through solving self-consistently the Schrodinger equation for theeigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as chargedistribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of thequantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistentcalculation can be used to understand important experimental findings and are in line with those measured experimentally.