Plasmon assisted resonant tunneling in a double barrier heterostructure

Authors

C. Zhang, University of WollongongFollow
M. L. Lerch, University of WollongongFollow
A. D. Martin, University of Wollongong
Philip E. Simmonds, University of WollongongFollow
L. Eaves, University of Nottingham, UK

Publication Details

This article was originally published as: Zhang,C, Lerch, MLF, Martin,AD, et al, Plasmon assisted resonant tunneling in a double barrier heterostructure, Physical Review Letters, 1994, 72(21), 3397-3400. Copyright 1994 American Physical Society. The original journal can be found here.

Abstract

When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling current is investigated. Experimental data taken inside a region of apparent bistability in one device reveal a satellite on the high energy side of the current resonance in the I(V) characteristic. A theoretical model based on the many-body transfer Hamiltonian formalism shows that a plasmon excitation has remarkably similar structure. Magnetic field data support the plasmon satellite interpretation.