Tc enhancement for nano-SiC doped MgB2 superconductors sintered in 5T pulsed magnetic field

Authors

S X. Dou, University of WollongongFollow
Lin Lu, University of WollongongFollow
Rong Zeng, University of WollongongFollow
R H. Chen, Shanghai University, China
HM Jin, Shanghai University
Wenxian Li, University of WollongongFollow
Yun Zhang, University of WollongongFollow
Y Li, Shanghai University China
M Y. Zhu, Shanghai University, China

RIS ID

31466

Publication Details

Li, W., Li, Y., Chen, R. H., Zhu, M., Jin, H., Zeng, R., Lu, L., Zhang, Y. & Dou, S. Xue. (2009). Tc enhancement for nano-SiC doped MgB2 superconductors sintered in 5T pulsed magnetic field. International Journal of Modern Physics B, 23 (17), 3482-3485.

Abstract

The superconductivity of nano-SiC doped MgB₂ sintered in pulsed magnetic field (PMF) was investigated with Raman scattering measurements and Raman spectral fit analysis. The critical transition temperature, T_c, for the sample sintered in 5T PMF is improved compared with that of the sample sintered without PMF. The high T_c is attributed to the strengthening of the electron-phonon coupling (EPC) in MgB₂, as reflected by the broadened E_2g mode in the Raman spectra. The EPC constants are estimated as 0.876 and 0.874, with the electron-E_2g coupling contribution 2.30 and 2.25, respectively. Magnetic field processing technology has been proved to be a powerful tool to improve the superconducting properties of SiC-doped MgB₂ superconductor.

Grant Number

ARC/DP0770205

Additional Grant Number

http://purl.org/au-research/grants/ARC/DP0770205