Title

Tc enhancement for nano-SiC doped MgB2 superconductors sintered in 5T pulsed magnetic field

RIS ID

31466

Publication Details

Li, W., Li, Y., Chen, R. H., Zhu, M., Jin, H., Zeng, R., Lu, L., Zhang, Y. & Dou, S. Xue. (2009). Tc enhancement for nano-SiC doped MgB2 superconductors sintered in 5T pulsed magnetic field. International Journal of Modern Physics B, 23 (17), 3482-3485.

Abstract

The superconductivity of nano-SiC doped MgB2 sintered in pulsed magnetic field (PMF) was investigated with Raman scattering measurements and Raman spectral fit analysis. The critical transition temperature, Tc, for the sample sintered in 5T PMF is improved compared with that of the sample sintered without PMF. The high Tc is attributed to the strengthening of the electron-phonon coupling (EPC) in MgB2, as reflected by the broadened E2g mode in the Raman spectra. The EPC constants are estimated as 0.876 and 0.874, with the electron-E2g coupling contribution 2.30 and 2.25, respectively. Magnetic field processing technology has been proved to be a powerful tool to improve the superconducting properties of SiC-doped MgB2 superconductor.

Grant Number

ARC/DP0770205

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