The combined influence of connectivity and disorder on Jc and Tc performances in MgxB2+10 wt % SiC

Authors

Wenxian Li, University of WollongongFollow
Rong Zeng, University of WollongongFollow
Lin Lu, University of WollongongFollow
Y Li, Shanghai University China
S. X. Dou, University of WollongongFollow

RIS ID

31450

Publication Details

Li, W. X., Zeng, R., Lu, L., Li, Y. & Dou, S. X. (2009). The combined influence of connectivity and disorder on J_c and T_c performances in Mg_xB₂+10 wt % SiC. Journal of Applied Physics, 106 (9), 1-7.

Abstract

The influences of connectivity and disorder on the critical current density J_c are discussed to clarify the different mechanisms of J_c(H) enhancement in different magnetic field ranges. Excess Mg in Mg_xB₂+10 wt % SiC composites effectively improves the connectivity, as evidenced by both the resistivity properties and the Raman scattering. The promising J_c(H) of Mg_1.15B₂+10 wt % SiC is attributed to both the high connectivity and the improved irreversibility field, H_irr, which is in agreement with the Raman fitting analysis. Raman scattering measurements suggest a strengthened electron-E_2g coupling and weakened disorder with Mg addition.

Grant Number

ARC/DP0770205

Additional Grant Number

http://purl.org/au-research/grants/ARC/DP0770205