Thermally assisted flux flow and individual vortex pinning in Bi2Sr2Ca2Cu3O10 single crystals grown by the traveling solvent floating zone technique

Authors

Xiaolin Wang, University of WollongongFollow
Aihua Li, University of WollongongFollow
S. Yu, National Institute for Material Science, Japan
S. Ooi, National Institute for Material Science, Japan
K. Hirata, National Institute for Material Science, Japan
C. T. Lin, Max-Planck Institut fur Festkorperforschung, GermanyFollow
E. W. Collings, Ohio State University, USAFollow
M. D. Sumption, Ohio State University, USA
M. Bhatia, Ohio State University, USA
Shichao Ding, University of WollongongFollow
S. X. Dou, University of WollongongFollow

RIS ID

13652

Publication Details

This article was originally published as: Wang, XL, Li, AH, Yu, S, Ooi, S, Hirata, K, Lin, CT, Collings, EW, Sumption, MD, Bhatia, M, Ding, SY & Dou, SX, Thermally assisted flux flow and individual vortex pinning in Bi2Sr2Ca2Cu3O10 single crystals grown by the traveling solvent floating zone technique, Journal of Applied Physics, May 2005, 97(10), pp. 10B114-1-10B114-3. Copyright American Institute of Physics. Original journal available here.

Abstract

Magnetoresisitivity and critical current density Jc as a function of temperature and field are studied for Bi2Sr2Ca2Cu3O10 single crystals grown using the traveling solvent floating zone technique. Below a characteristic field B*, Jc as a function of field exhibits a field-independent plateau associated with thermally activated pinning of individual vortices. Analysis of resistive transition broadening revealed that thermally activated flux flow is found to be responsible for the resistivity contribution in the vicinity of Tc. The activation energy U0 is 800 K in low field, scales as B–1/6 for BB–1/2 for B>2 T.