Strong terahertz emission from (100) p-type InAs

Authors

Rajind Mendis, University of WollongongFollow
M. L. Smith, University of WollongongFollow
L. J. Bignell, University of Wollongong
R. Vickers, University of WollongongFollow
R. A. Lewis, University of WollongongFollow

RIS ID

13663

Publication Details

This article was originally published as: Mendis, R, Smith, ML, Bignell, LJ, Vickers, REM & Lewis, RA, Strong terahertz emission from (100) p-type InAs, Journal of Applied Physics, December 2005, 98, 126104. Copyright American Institute of Physics. Original journal available here.

Abstract

Terahertz emission has been observed from (100) Zn-acceptor-doped InAs under illumination by fs pulses of near-infrared radiation. Turning the crystal about the surface normal produces two maxima per rotation, whether the angle of incidence is 45° or 75°, in contrast to (111) p-InAs, where three maxima per rotation have been reported. The emitted terahertz power has a quadratic variation with the pump power and decreases with increasing temperature in the range 20–300 K. This behavior is consistent with a photocurrent surge being the dominant terahertz generating mechanism at low excitation fluences. The p-type InAs generates about two orders of magnitude more power than the standard unbiased terahertz emitter, 1mm thick ZnTe.