Significant improvement of activation energy in MgB2/Mg2Si multilayer films

Authors

Y. Zhao, University of WollongongFollow
S X. Dou, University of WollongongFollow
M. Ionescu, University of WollongongFollow
P. Munroe, University of New South Wales

RIS ID

14213

Publication Details

This article was originally published as Zhao, Y & Dou, SX, Significant improvement of activation energy in MgB2/Mg2Si multilayer films, Applied Physics Letters, 2006, 88(1), 12502-1-12502-3. Original journal available here.

Abstract

We obtained a MgB2/Mg2Si multilayer structure by sequentially switching a stoichiometric MgB2 target and a Si target during off-axis pulsed-laser deposition. The transmission-electron-microscopic cross-sectional image of the resulting film exhibits a layered structure with each MgB2 layer being 40–50 nm thick and the Mg2Si interlayers about 5 nm thick. A clearly enhanced anisotropy in the irreversibility lines and the vortex activation energy was observed. Pinning and the flux flow activation energy are significantly increased in parallel applied fields.