Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFeO3/Bi3.25Sm0.75Ti2.98V0.02O12 double-layered thin film

Authors

Z. Cheng, University of WollongongFollow
Xiaolin Wang, University of WollongongFollow
C. V. Kannan, National Institute for Materials Science, Japan
Kiyoshi Ozawa, National Institute for Materials Science, JapanFollow
H. Kimura, National Institute for Materials Science, Japan
T. Nishida, Nara Institute of Science and Technology, Japan
S. Zhang, Pennsylvania State University, USA
T. R. Shrout, Pennsylvania State University, USA

RIS ID

17949

Publication Details

This article was originally published as Cheng, Z, Wang, X, Kannan, CV, Ozawa, K, Kimura, H, Nishida, T, Zhang, S & Shrout, TR, Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFeO3/Bi3.25Sm0.75Ti2.98V0.02O12 double-layered thin film, Applied Physics Letters, 2006, 88, 132909. Original journal available here.

Abstract

Multiferroic BiFeO3/Bi3.25Sm0.75Ti2.98V0.02O12 double-layered thin films on Pt/Ti/SiO2/Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2Pr) and coercive field (Ec) were 71.8 µC/cm2 and 148 kV/cm at a maximum applied voltage of 13 V, respectively. The value of the magnetic moment was found to be 17.5 emu/cm3. The enhancement of the polarization originated from the BiFeO3 with Bi3.25Sm0.75Ti2.98V0.02O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFeO3, due to partial epitaxial growth on the bismuth titanate surface.