Far-infrared measurements of cyclotron resonance and impurity transitions in bulk n-GaAs in pulsed magnetic fields

Authors

R A. Lewis, University of WollongongFollow
R J. Heron, University of Wollongong
R G. Clark, University of New South Wales
R P. Starrett, University of New South Wales
A V. Skougarevsky, University of New South Wales

RIS ID

113493

Publication Details

Lewis, R. A., Heron, R. J., Clark, R. G., Starrett, R. P. & Skougarevsky, A. V. (1996). Far-infrared measurements of cyclotron resonance and impurity transitions in bulk n-GaAs in pulsed magnetic fields. 1996 Conference on Optoelectronic and Microelectronic Materials And Devices: Proceedings (pp. 325-328). United States: IEEE.

Abstract

The photoconductive response of n-GaAs has been measured under laser radiation in the wavelength range 71 to 513 /spl mu/m at temperatures as low as 400 mK and at magnetic fields as high as 42 T. A rich variety of spectral features are observed: cyclotron resonance, transitions associated with D/sup -/, and transitions to stable and metastable hydrogenic states. The use of a pulsed magnet has extended the magnetic field range over which data is available by a factor of three.