Far-infrared studies of extremely high mobility gated GaAs/AlGaAs structures in magnetic fields

Authors

R J. Heron, University of Wollongong
R A. Lewis, University of WollongongFollow
R G. Clark, University of New South Wales
R P. Starrett, University of New South Wales
B E. Kane, University of New South Wales
G R. Facer, University of New South Wales
N E. Lumpkin, University of New South Wales
D G. Rickel, Los Alamos National Laboratory
L N. Pfeiffer, Bell Laboratories
K W. West, Bell Laboratories

RIS ID

113497

Publication Details

Heron, R. J., Lewis, R. A., Clark, R. G., Starrett, R. P., Kane, B. E., Facer, G. R., Lumpkin, N. E., Rickel, D. G., Pfeiffer, L. N. & West, K. W. (1998). Far-infrared studies of extremely high mobility gated GaAs/AlGaAs structures in magnetic fields. Physica B: Condensed Matter, 256-258 481-485.

Abstract

Extremely narrow cyclotron resonance linewidths are reported in GaAs-based heterostructures measured using double-modulated far-infrared photoconductivity. At low carrier densities and temperatures full widths at half maximum as small as 6 mT are observed.