Far-infrared laser photoconductivity of n-GaAs multiple quantum wells in a pulsed magnetic field
Far-infrared laser magnetospectroscopy of a multiple quantum well (MQW) structure, δ-doped with Si donors in both the wells and the barriers, has been carried out over the energy range 6–18 meV using a pulsed magnet, the calibration of which is confirmed by cyclotron resonance measurements on bulk n-GaAs. Apart from cyclotron resonance, the MQW exhibits a spectral feature at a magnetic field exceeding that of the 1s→2p+ bulk transition at the same laser wavelength. This feature is attributed to a transition involving electrons in the well which are bound to donor sites in the barriers.
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