Title

Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO2

RIS ID

103020

Publication Details

Li, X., Zhang, G., Ostrovski, O. & Tronstad, R. (2016). Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO2. Journal of Materials Science, 51 (2), 876-884.

Abstract

The formation of silicon by reaction between quartz and SiC has been studied in the temperature range of 1600-1900 °C in argon and hydrogen atmospheres. The reaction process was monitored by an infrared gas analyzer, and the reaction products were characterized by LECO, XRD, and SEM. Quartz-SiC reactions with SiO2/SiC molar ratio of 1:1 and 1:2 were studied in a fixed bed reactor in a graphite furnace. The production of silicon from quartz and SiC was strongly affected by temperature, SiO2/SiC molar ratio, and gas atmosphere. The yield of silicon in the reaction at 1900 °C in argon from samples with SiO2/SiC molar ratios of 1:1 and 1:2 reached 32.7 and 44.5 %, respectively. SiO2-SiC reaction at 1900 °C in hydrogen with the SiO2/SiC molar ratio of 1:2 resulted in the silicon yield of 66.7 %. Higher silicon yield in hydrogen was attributed for the involvement of hydrogen in the direct reduction of silica to SiO.

Grant Number

ARC/LP100100868

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