Integration of 1550 nm vertical-cavity surface-emitting laser with gratings on SOI
We designed a 1550 nm vertical-cavity surface-emitting laser (VCSEL), which comprises a cladding, multiple quantum well (QW) active area, oxide restrict layer, substrate, and high reflectivity distributed Bragg reflectors (DBRs). The VCSEL cavity consists of the cladding, multiple QW active area, and limiting layer. AlGaAsSb/AlAsSb has been used for the DBR mirror system to achieve lattice matching. The QW/barrier comprises GaInAsN/AlGaInAs. By epitaxial growth, the DBR is banded with the active layer at the cavity antinode of the standing wave field, and the cavity length is set to 1.0λ. A double-oxide layer, which is more beneficial than a single-oxide layer, has been adopted in the laser. Discrete Fourier transform is performed on the captured signal to extract the spectral content of the measured signal. By the FDTD method and the PML boundary condition, we achieve a 35% relative light intensity by introducing a TE mode from the cavity to the in-plane grating.
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