The effect of bias voltage on the optical conductance of a single layer graphene p-n junction in THz regime
We have carried out a theoretical and computational study of the nonlinear optical conductance in terahertz to infrared regime of a single layer graphene p-n junction (GPNJ) with intra and inter band transition under moderate electric field. It is shown that the negative connectivity of single layer graphene can be enhanced and affected by the bias voltage. The result can be important to the application of graphene in coherent terahertz radiation sources and optoelectronics devices.
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