A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors

Authors

Marco Petasecca, University of PerugiaFollow
Francesco Moscatelli, University of Perugia
Daniele Passeri, University of Perugia
Giorgio Umberto Pignatel, University of Perugia
Carlo Scarpello, University of Perugia
Giovanni Caprai, University of Perugia

RIS ID

80229

Publication Details

Petasecca, M., Moscatelli, F., Passeri, D., Pignatel, G. Umberto., Scarpello, C. & Caprai, G. (2005). A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors. IEEE Nuclear Science Symposium Conference Record, 1490-1493.

Abstract

In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to Improve the radiation hardness of silicon detectors up to fluences of 1016n/cm2. In this work the simulated electrical characteristics of Irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of 1016n/cm2 shows better results In term of charge collection efficiency using a p-type silicon detector.