Thermal and electrical characterization of silicon photomultiplier

Authors

M Petasecca, Italian National Institute of Nuclear PhysicsFollow
B Alpat, Italian National Institute of Nuclear Physics
G Ambrosi, Italian National Institute of Nuclear Physics
P Azzarello, Italian National Institute Of Nuclear Physics
R Battiston, Italian National Institute Of Nuclear Physics
M Ionica, Italian National Institute Of Nuclear Physics
A Papi, Italian National Institute of Nuclear Physics
G U. Pignatel, Italian National Institute of Nuclear Physics
S Haino, Italian National Institute Of Nuclear Physics

RIS ID

80157

Publication Details

Petasecca, M., Alpat, B., Ambrosi, G., Azzarello, P., Battiston, R., Ionica, M., Papi, A., Pignatel, G. U. & Haino, S. (2008). Thermal and electrical characterization of silicon photomultiplier. IEEE Transactions on Nuclear Science, 55 (3), 1686-1690.

Abstract

Detection of low levels of light is one of the key aspects in medical and space applications. Silicon photomultiplier, a novel type of avalanche photodetector which operates in Geiger mode, shows promising results and offer superior design options. The performance characteristics of the SiPM realized in FBK-irst are studied and presented in this paper. The leakage current, dark rate and internal gain are characterized as a function of temperature. The investigation has been carried out in the framework of the DASiPM Collaboration and the INFN/FBK-irst MEMS project. © 2008 IEEE.