Title

Theory of the integer quantum hall effect in graphene

RIS ID

46753

Publication Details

Toyoda, T. & Zhang, C. (2012). Theory of the integer quantum hall effect in graphene. Physics Letters Section A: General, Atomic and Solid State Physics, 376 (4), 616-619.

Abstract

A Hall resistivity formula for the 2DES in graphene is derived from the zero-mass Dirac field model adopting the electron reservoir hypothesis. The formula reproduces perfectly the experimental resistivity data [K.S. Novoselov, et al., Nature 438 (2005) 201]. This perfect agreement cannot be achieved by any other existing models. The electron reservoir is shown to be the 2DES itself.

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Link to publisher version (DOI)

http://dx.doi.org/10.1016/j.physleta.2011.11.051