Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

Authors

Zhenxiang Cheng, University of WollongongFollow
Xiaolin Wang, University of WollongongFollow
S X. Dou, University of WollongongFollow
Kiyoshi Ozawa, National Institute for Materials Science, JapanFollow
Hideo Kimura, National Institute For Materials Science, Japan

RIS ID

19999

Publication Details

Cheng, Z, Wang, X, Dou, SX, Ozawa, K & Kimura, H (2007), Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature, Applied Physics Letters, 90(22), pp. 222902-1-222902-3.

Abstract

The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi_3.25Sm_0.75V_0.02T_2.98O₁₂ thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated temperature, and the coercive field decreased at the same time due to the strong domain depinning process at higher temperature. This film shows almost a polarization-fatigue-free character at room temperature, but the aggregation and diffusion of the thermally activated long-range oxygen vacancies caused strong domain pinning, and thus a poor fatigue resistance was observed at elevated temperature.