RIS ID
78429
Abstract
Flux pinning mechanism of graphene oxide (GO) doped MgB2 has been systematically studied. In the framework of the collective pinning theory, a B-T phase diagram has been constructed. By adjusting the GO doping level, the pinning mechanism in MgB2 transformed from transition temperature fluctuation induced pinning, δTc pinning, to mean free path fluctuation induced pinning, δl pinning, is observed. Furthermore, in terms of the thermally activated flux flow model, the pinning potential in high field (B > 5 T) is enhanced by GO doping. The unique feature of GO is the significant improvement of both low field Jc and high field Jc.
Grant Number
ARC/DP0770205
Grant Number
ARC/LP0989352
Publication Details
Xiang, F. X., Wang, X., Xu, X., De Silva, K. S.B., Wang, Y. & Dou, S. X. (2013). Evidence for transformation from δTc to δl pinning in MgB2 by graphene oxide doping with improved low and high field Jc and pinning potential. Applied Physics Letters, 102 (15), 152601-1-152601-5.