Nb and La codoped BiFeO3 thin films were fabricated on oxide bottom electrodes, LaNiO3/Si and IrO2/Si, by pulsed laser deposition method. The doped BiFeO3 thin film capacitor on LaNiO3showed a remnant polarization of more than 75 µC/cm2 in a saturated hysteresis loop. The same La and Nb codoped BiFeO3 thin film capacitors on IrO2 showed a larger remnant polarization, while with a significant contribution from the leakage current. Furthermore, the doped BiFeO3 capacitor on the LaNiO3 bottom electrode showed worse fatigue resistance than the film on IrO2. All the doped BiFeO3 thin films showed weak ferromagnetism at room temperature.