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We report the magnetotransport properties of large area graphene on stretchable polyethylene terephthalate substrates. At 2 K, weak localization of electrons introduced negative magnetoresistance at low field; a transition to positive magnetoresistance followed as the external field increases. Our results suggest that weak localization contributes to Hall effect at low temperature. At room temperature, only classical Lorentz force contribution can be observed. Angular dependence of the external magnetic field on longitudinal and transverse resistivity is measured to test the interplay between weak localization and Lorentz force contribution. Quantitative simulations based on quantum interference theory produced excellent agreement with the experiments.