Bi0.5Sb1. 5Te3 thin films were deposited on glass substrates by pulsed laser deposition (PLD) method at room temperature. Annealing effect on properties of the films was studied by structural, morphology and physical characterizations. It was found that the as-grown amorphous film crystallizes at annealing temperature of 473 K. A semiconductor-metal transition was observed in annealed films. A linear magnetoresistance (MR) was investigated in the annealed films in a magnetic field up to 13 T without saturation at low temperature.