Title

Determination of the relative influences of carbon doping and disorder on field and temperature dependent critical current density of MgB2

RIS ID

31315

Publication Details

Chen, SK, Xu, X, Kim, J, Dou, SX & MacManus-Driscoll, JL (2009), Determination of the relative influences of carbon doping and disorder on field and temperature dependent critical current density of MgB2, Superconductor Science and Technology, 22(12), pp. 1-5.

Abstract

SiC was mixed with Mg and B and reacted by either a one-step in situ or two-step method at 650 or 850 °C. By doing so, it was possible to determine the extent to which scattering via C doping influences the magnitude of field dependent critical current density, Jc(H), compared to pinning via generation of microstructural disorder. The one-step reaction method leads to Mg2Si formation and at the same time to more C doping of MgB2 than the two-step method. Carbon increases both the irreversibility field, Hirr, and upper critical field, Hc2 (TK). However, for the temperatures (6 and 20 K) and fields (up to 7 T) studied, pinning rather than scattering overwhelmingly dominates the magnitude of the field dependent critical current density.

Grant Number

ARC/DP0770205

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Link to publisher version (DOI)

http://dx.doi.org/10.1088/0953-2048/22/12/125005