Title

Detection of Amorphous Silica in Oxidized Maxthal Ti3SiC2 at 500-1000°C

RIS ID

119215

Publication Details

Pang, W. K., Low, I. M., Hanna, J. V. & Palmquist, J. P. (2010). Detection of Amorphous Silica in Oxidized Maxthal Ti3SiC2 at 500-1000°C. Strategic Materials and Computational Design, Volume 31, Issue 10 (pp. 181-190). Hoboken, New Jersey: John Wiley and Sons.

Abstract

This paper describes the use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to identify the amorphous silica in Ti3SiC2 oxidised at 500-1000°C. The formation of an amorphous Si02 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of TbSiC2 at l000°C.

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