RIS ID
117665
Abstract
Point defect pinning centers are the key factors responsible for the flux pinning and critical current density in type II superconductors. The introduction of the point defects and increasing their density without any changes to the superconducting transition temperature T c , irreversibility field H irr , and upper critical field H c2, would be ideal to gain insight into the intrinsic point-defect-induced pinning mechanism. In this work, we present our investigations on the critical current density J c , H c2 , H irr , the activation energy U 0 , and the flux pinning mechanism in Fe 1-x Co x Se 0.5 Te 0.5 (x = 0, 0.03 and 0.05) single crystals. Remarkably, we observe that the J c and U 0 are significantly enhanced by up to 12 times and 4 times for the 3at.% Co-doped sample, whereas, there is little change in T c , H irr , and H c2 . Furthermore, charge-carrier mean free path fluctuation, δl pinning, is responsible for the pinning mechanism in Fe 1-x Co x Se 0.5 Te 0.5 .
Grant Number
ARC/DP130102956
Grant Number
ARC/FT130100778
Publication Details
Sang, L., Maheswari, P., Yu, Z., Yun, F. F., Zhang, Y., Dou, S., Cai, C., Awana, V. P. S. & Wang, X. (2017). Point defect induced giant enhancement of flux pinning in Co-doped FeSe0.5Te0.5 superconducting single crystals. AIP Advances, 7 (11), 115016-1-115016-9.