Title

Enhancing s, p-d exchange interactions at room temperature by carrier doping in single crystalline Co0.4Zn0.6O epitaxial films

RIS ID

112709

Publication Details

Cao, Q., Fu, M., Zhu, D., Cai, L., Zhang, K., Liu, G., Chen, Y., Kang, S., Yan, S., Mei, L. & Wang, X. (2017). Enhancing s, p-d exchange interactions at room temperature by carrier doping in single crystalline Co0.4Zn0.6O epitaxial films. Applied Physics Letters, 110 092402-1-092402-4.

Abstract

Magnetic doping of semiconductors has been actively pursued because of their potential applications in the spintronic devices. Central to these efforts is a drive to control the mutual interactions between their magnetic properties (supported by d electrons of the magnetic ions) and their semiconductor properties (supported by s and/or p electrons) at room temperature (RT). Despite the long, intensive efforts, the experimental evidence of thermally robust s, p-d coupling in a semiconductor remains scarce and controversial. Here, we report the enhancement of RT ferromagnetic s, p-d exchange interaction by means of carrier doping in single crystalline Co0.4Zn0.6O epitaxial films with a high Co concentration. Magneto-transport measurements reveal that spin-polarized conducting carriers are produced at RT and are increased with the carrier density through Ga3þ doping, owing to the s, p-d coupling between Ga (4s), O (2p), and Co (3d) orbitals. With the ability to individually control carrier density and magnetic doping, single crystalline Ga(Co, Zn)O films can lay a solid foundation for the development of practical semiconductor spintronic devices operable at RT

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Link to publisher version (DOI)

http://dx.doi.org/10.1063/1.4977765