Effect of oxygen vacancy on electrical property of acceptor doped BaTiO3-Na0.5Bi0.5TiO3-Nb2O5 X8R systems
RIS ID
107976
Abstract
In this study, we reported a new BaTiO3-Na0.5Bi0.5TiO3-Nb2O5-Mn2O3/Fe2O3/Co3O4/In2O3 X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy (inline image ) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Curie point is largely depended on the inline image concentration, which can be confirmed by the dielectric behavior and A1g octahedral breathing modes in Raman spectrum. In addition, the activation energy of inline image diffusion is greatly reduced with the increase in inline image concentration. It was found that the remnant polarization and coercive field were both decreased with increasing inline image concentration, due to the facilitated defect dipoles reorientation and domain switching.
Grant Number
ARC/FT140100698
Publication Details
Sun, Y., Liu, H., Hao, H. & Zhang, S. (2016). Effect of oxygen vacancy on electrical property of acceptor doped BaTiO3-Na0.5Bi0.5TiO3-Nb2O5 X8R systems. Journal of the American Ceramic Society, 99 (9), 3067-3073.