Title

A high QM relaxor ferroelectric single crystal: Growth and characterization

RIS ID

107831

Publication Details

Luo, J., Hackenberger, W., Zhang, S. & Shrout, T. R. (2010). A high QM relaxor ferroelectric single crystal: Growth and characterization. 2010 IEEE International Ultrasonics Symposium (pp. 68-71). United States: Institute of Electrical and Electronics Engineers.

Abstract

Mn doped PIN-PMN-PT single crystals with diameter of 50mm have been successfully grown by the Bridgman method along >111<, >110< and >001< orientations. The effect of the acceptor dopant, Mn, on mechanical loss and other electromechanical properties was studied in comparison with pure PIN-PMN-PT single crystal under high and low electric fields. A complete set of piezoelectric, dielectric and elastic properties was derived from resonance measurements. It was demonstrated that by doping Mn, QM increases 4-5 times to 700-1000 in >001001< orientation. 2010 IEEE.

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Link to publisher version (DOI)

http://dx.doi.org/10.1109/ULTSYM.2010.5935675