Title

High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system

RIS ID

107539

Publication Details

Lim, J. Bong., Zhang, S. & Shrout, T. R. (2011). High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system. Electronic Materials Letters, 7 (1), 71-75.

Abstract

BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm3 at 100 kV/cm for the BSBT-KBT20. 2011 The Korean Institute of Metals and Materials and Springer Netherlands.

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Link to publisher version (DOI)

http://dx.doi.org/10.1007/s13391-011-0311-8