Mechanism analysis for the enhanced electromagnetic properties in nano-SiC-doped MgB2 based on the discussion of the sintering process
RIS ID
104861
Abstract
Combined with the thermal analysis and phase identification, the sintering process of nano-SiC-doped MgB2 samples was systemically investigated. Accordingly, a new consideration for the mechanism of enhanced electromagnetic properties of nano-SiC-doped MgB2 is proposed, which is more consistent with the observed experimental results of nano-SiC-doped MgB 2 samples sintered at different temperatures and has many advantages over the previous model in explaining the experimental observations. 2009 IOP Publishing Ltd.
Publication Details
Ma, Z., Liu, Y., Zhao, Q., Dong, Z. & Yu, L. (2009). Mechanism analysis for the enhanced electromagnetic properties in nano-SiC-doped MgB2 based on the discussion of the sintering process. Superconductor Science and Technology, 22 (8), 085015-1-085015-4.