Semiconductor hydrogen analogue candidates for observation of quasi-Landau oscillations associated with semi-classical electron orbits
Recently, oscillations above the ionization threshold were observed in high purity Si in a magnetic field. These oscillations were found to be related to the semi-classical motion of excited electrons around impurity centers periodically returning to the nucleus. This effect had been previously observed for many elemental gases in magnetic fields, yet had never been observed in the semiconductor environment. In this work, we analyze other semiconductors to see if they provide a more favorable medium over Si for the observation of these orbits, and to establish the experimental conditions required to make such observations.