Title

Raman scattering studies of dilute InP1−xBix alloys reveal unusually strong oscillator strength for Bi-induced modes

RIS ID

101554

Publication Details

Pan, W., Steele, J., Wang, P., Wang, K., Song, Y., Yue, L., Wu, X., Xu, H., Zhang, Z., Xu, S., Lu, P., Wu, L., Gong, Q. & Wang, S. (2015). Raman scattering studies of dilute InP1−xBix alloys reveal unusually strong oscillator strength for Bi-induced modes. Semiconductor Science and Technology, 30 (9), 094003-1-094003-5.

Abstract

Room-temperature Raman scattering studies of new InP1−xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm−1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm−1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm−1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1−xBix but also in the quaternaries such as In1−yGayP1−xBix and In1−yAlyP1−xBix.

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Link to publisher version (DOI)

http://dx.doi.org/10.1088/0268-1242/30/9/094003