Raman scattering studies of dilute InP1−xBix alloys reveal unusually strong oscillator strength for Bi-induced modes

Authors

Wenwu Pan, Chinese Academy of Sciences
Julian Steele, University of WollongongFollow
Peng Wang, Tianjin University
Kai Wang, Stanford University
Yuxin Song, Chinese Academy of Sciences
Li Yue, Chinese Academy of Sciences
Xiaoyan Wu, Chinese Academy of Sciences
Hao Xu, Chinese Academy of Sciences
Zhenpu Zhang, Chinese Academy of Sciences
Shijie Xu, University of Hong Kong
Pengfei Lu, Imperial College London
Liyuan Wu, Beijing University of Posts and Telecommunications
Qiang Gong, Shanghai Jiao Tong University
Shumin Wang, Chalmers University of Technology, Sweden, Chinese Academy of Sciences

RIS ID

101554

Publication Details

Pan, W., Steele, J., Wang, P., Wang, K., Song, Y., Yue, L., Wu, X., Xu, H., Zhang, Z., Xu, S., Lu, P., Wu, L., Gong, Q. & Wang, S. (2015). Raman scattering studies of dilute InP_1−xBi_x alloys reveal unusually strong oscillator strength for Bi-induced modes. Semiconductor Science and Technology, 30 (9), 094003-1-094003-5.

Abstract

Room-temperature Raman scattering studies of new InP_1−xBi_x alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm⁻¹ are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm⁻¹ are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm⁻¹, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP_1−xBi_x but also in the quaternaries such as In_1−yGa_yP_1−xBi_x and In_1−yAl_yP_1−xBi_x.