RIS ID
24946
Abstract
The concept of the spin gapless semiconductor in which both electron and hole can be fully spin polarized is proposed, and its possibility is presented on the basis of first-principles electronic structure calculations. Possible new physics and potential applications in spintronic devices based on the spin gapless semiconductors are discussed.
Publication Details
Wang, X (2008), Proposal for a new class of materials: spin gapless semiconductors, Physical Review Letters, 100(15), pp. 156404-1-156404-4.