Impacts of crystal orientation of GaAs on the interfacial structures and electrical properties of Hf0.6La0.4Ox films

Authors

Tingting Jia, National Institute For Materials Science
Hideo Kimura, National Institute For Materials Science
Hongyang Zhao, Chinese Academy of Sciences
Qiwen Yao, University of WollongongFollow
Zhenxiang Cheng, University of WollongongFollow
Xinghong Cheng, Chinese Academy Of Sciences
Yuehui Yu, Chinese Academy Of Sciences

RIS ID

88929

Publication Details

Jia, T., Kimura, H., Zhao, H., Yao, Q., Cheng, Z., Cheng, X. & Yu, Y. (2014). Impacts of crystal orientation of GaAs on the interfacial structures and electrical properties of Hf_0.6La_0.4O_x films. Journal of Applied Physics, 115 (13), 134101-1-134101-6.

Abstract

One of the major challenges in realizing the GaAs channel in the metal oxide semiconductor field effect transistor is the degrading in electron transport properties at the interface between GaAs and the gate oxide. In this study, Hf_0.6La_0.4O_x gate oxide films were deposited at a low temperature (200 °C) on GaAs(111)A and GaAs(100) substrates by plasma enhanced atomic layer deposition. Microstructure analysis indicates that residuals of gallium oxide, arsenic oxide, and As element remained at the interface of Hf_0.6La_0.4O_x/GaAs(100). On contrast, a smoother interface is observed between Hf_0.6La_0.4O_x thin film and GaAs(111)A substrate. Furthermore, a reduction of interfacial layer is observed in Hf_0.6La_0.4O_x/GaAs(111)A. Electrical characterization of the metal-insulator-semiconductor Pt/Hf_0.6La_0.4O_x/n-GaAs(111)A capacitor indicated a reduction of Dit and leakage current compared with the capacitor fabricated on GaAs(100).