THz photomixer with milled nanoelectrodes on LT-GaAs

Authors

Gediminas Seniutinas, Swinburne University of Technology
Gediminas Gervinskas, Swinburne University of Technology
Evan Constable, University of WollongongFollow
Arunas Krotkus, Center for Physical Sciences and Technology
Gediminas Molis, Teravil Ltd
Gintaras Valusis, Center for Physical Sciences and Technology
Roger A. Lewis, University of WollongongFollow
Saulius Professor Saulius Juodkazis, Swinburne University of Technology

RIS ID

93129

Publication Details

Seniutinas, G., Gervinskas, G., Constable, E., Krotkus, A., Molis, G., Valusis, G., Lewis, R. A. & Juodkazis, S. (2014). THz photomixer with milled nanoelectrodes on LT-GaAs. Applied Physics A: materials science and processing, 117 (2), 439-444.

Abstract

A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and characterized. It was designed for spectral range of 0.3-0.4 THz where molecular fingerprinting and sensing are performed. By combination of electron beam lithography with post-processing using focused ion beam (FIB), milling the THz emitter was successfully fabricated. Nanogaps as small as 40 nm width in the active area of photomixer were milled by FIB. Nanocontacts enhance electric fields of the illuminated and THz radiation and contribute to a better collection of photo-electrons. THz emission was obtained and spectrally characterized.