Title

Simulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals

RIS ID

90713

Publication Details

Shahbazi, M., Wang, X. L., Ionescu, M., Ghorbani, S. R., Dou, S. X. & Choi, K. Y. (2014). Simulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals. Science of Advanced Materials, 6 (7), 1650-1654.

Abstract

In this work, we analyse the influence of C4+ irradiation with ion flounce of 3 x 1012 up to 2.3 x 1015 ion·cm−2 on significant enhancement of the critical current density, Jc , in BaFe1.9Ni0.1As2 single crystals. Jc was increased from 0.61 x 105 up to 0.94 x 105 A/cm2 at T = 10 K and H = 0.5 T. BaFe1.9Ni0.1As2 single crystals with and without the C4+-irradiation were characterized by magneto-transport and magnetic measurements up to 13 T over a wide range of temperatures below and above the superconducting critical temperature, Tc . It is found that the C4+-irradiation causes little change in Tc , but it can greatly enhance the in-field critical current density by a factor of up to 1.5. Higher dose of C4+ ions, causes further Jc enhancement at T=10 K. furthermore, flux jumping completely disappeared at T=2 K after second C4+-irradiation. Our Monte Carlo simulation results show that all the C4+ ions end up in a well defined layer, causing extended defects and vacancies at the layer, but few defects elsewhere on the irradiation paths. Furthermore, the normal state resistivity is enhanced by the light C4+ irradiation, while the upper critical field, Hc2, the irreversibility field, Hirr, and Tc were affected very little.

Grant Number

ARC/DP1094073

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Link to publisher version (DOI)

http://dx.doi.org/10.1166/sam.2014.1937