Improved ferroelectric properties in multiferroic BiFeO3 thin films through La and Nb codoping

Authors

Zhenxiang Cheng, University of WollongongFollow
Xiaolin Wang, University of WollongongFollow
S X. Dou, University of WollongongFollow
Hideo Kimura, National Institute for Materials Science, Japan
Kiyoshi Ozawa, National Institute for Materials Science, JapanFollow

RIS ID

23027

Publication Details

Cheng, Z, Wang, X, Dou, SX, Kimura, H & Ozawa, K (2008), Improved ferroelectric properties in multiferroic BiFeO3 thin films through La and Nb codoping, Physical Review B (Condensed Matter and Materials Physics), 77(9), pp. 092101-1-092101-4.

Abstract

We report the significant improvement of the ferroelectric properties of BiFeO₃thin film through control of electrical leakage by Nb doping. A very large remanent electrical polarization value of 80 µC/cm² was observed in Bi_0.8La_0.2Nb_0.01Fe_0.99O₃ thin film on Pt/Ti/SiO₂/Si substrate. The doping effect of Nb in reducing the movable charge density due to oxygen vacancies in BiFeO₃ was confirmed by the dielectric measurements. A very small loss was observed in the Nb and La codoped BiFeO₃ thin film. As well as the improvement in the ferroelectric properties, the magnetic moment was also enhanced due to the doping of La.

Grant Number

ARC/DP0558753, ARC/DP0665873

Additional Grant Number

http://purl.org/au-research/grants/arc/DP0558753

http://purl.org/au-research/grants/arc/DP0665873