Title

Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy

RIS ID

87963

Publication Details

Chen, Q., Shi, D., Wang, X., Lewis, R. A. & Zhang, C. (2013). Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy. 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (pp. 1-2). Germany: The Institute of Electrical and Electronics Engineers Inc.

Abstract

We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.

Grant Number

ARC/LX0668576, ARC/LX0776043, ARC/LE0668322

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Link to publisher version (DOI)

http://dx.doi.org/10.1109/IRMMW-THz.2013.6665422